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Radio Physics and Radio Astronomy Vol. 11, 2006, No.2, June, p.186
Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
I.P. Storozhenko
V. N. Karazin Kharkov National University, 4, Svobodу Sq., Kharkov, 61077, Ukraine
Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown to outperform by output and generation efficiency those employing spatially homogeneous AlxGa1-xAs compound semiconductor within the whole frequency range for x=0ё0.2.
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